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DSS3515MQ

PNP, 15V, 0.5A, DFN1006-3

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

Feature(s)

  • BVCEO > -15V
  • IC = -500mA High Collector Current
  • ICM = -1A Peak Pulse Current
  • PD = 1000mW Power Dissipation
  • Low Collector-Emitter Saturation Voltage, VCE(SAT)
  • 0.60mm2 Package Footprint, 13 Times Smaller than SOT23
  • 0.5mm Height Package Minimizing Off-Board Profile
  • Complementary NPN Type DSS2515M
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

Category

Low Saturation Transistor

Polarity

PNP

VCEO, VCES (V)

15

IC (A)

0.5

ICM (A)

1

PD (W)

0.4

hFE (Min)

150

hFE (@ IC) (A)

0.1

hFE(Min 2)

90

hFE (@ IC2) (A)

0.5

VCE(sat) Max (mV)

25

VCE(SAT) (@ IC/IB) (A/mA)

0.01/0.5

VCE(sat) (Max.2) (mV)

250

VCE(sat) (@ IC/IB2) (A/mA)

0.5/50

fT (MHz)

340

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability