Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO247-4 Standard

Back to DMWSH120H18HM4

DMWSH120H18HM4

1200V N-Channel Silicon Carbide Power MOSFET

Datasheet

Contact Sales

Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
High BV_DSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under a separate datasheet (DMWSH120H18HM4Q)

Application(s)

SMPS (switching mode power supplies)
UPS (uninterruptible power supplies)
DC-DC converters for EV/HEV
Solar inverters
On-board chargers (OBC)

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	1200 V
\|V_GS\| (±V)	18, 5 ±V
\|I_DS\| @T_C = +25°C (A)	108 A
P_D @T_C = +25°C (W)	313 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	18 (@ 18V) mΩ
\|V_GS(TH)\| Min (V)	2.04 V
\|V_GS(TH)\| Max (V)	4.4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	158 (@ 18V) nC
C_ISS Typ (pF)	4206 pF
C_ISS Condition @\|V_DS\| (V)	800 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.