Diodes Incorporated
TO 247 4

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1200V N-Channel Silicon Carbide Power MOSFET

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This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.


  • Low On-Resistance
  • High BVDSS Rating for Power Application
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/


  • Data centers and telecom power supplies
  • Industrial motor drives
  • DC-DC converters
  • Solar inverters
  • EV battery chargers

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 1200 V
|VGS| (±V) 15, 4 ±V
|IDS| @TC = +25°C (A) 37.2
PD @TC = +25°C (W) 208
RDS(ON)Max@ VGS(10V)(mΩ) 100 @ 15V mΩ
|VGS(TH)| Min (V) 1.7 V
|VGS(TH)| Max (V) 3.5 V
QG Typ @ |VGS| = 10V (nC) 59.5 @ 15V nC
CISS Typ (pF) 1516 pF
CISS Condition @|VDS| (V) 1000 V

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