80V +175°C N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 80 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 100 A |
PD @TA = +25°C (W) | 2.8 W |
PD @TC = +25°C (W) | 136 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 4 mΩ |
|VGS(TH)| Min (V) | 2 V |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 63 nC |
CISS Typ (pF) | 4209 pF |
CISS Condition @|VDS| (V) | 40 V |