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DMTH8028LFVW

80V 175?C N-Channel Enhancement Mode MOSFET PowerDI3333-8

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Small Form Factor, Thermally Efficient Package Enables Higher Density End Products
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH8028LFVWQ)

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

80 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

27 A

PD @TA = +25°C (W)

3.5 W

RDS(ON)Max@ VGS(10V)  (mΩ)

25 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

41 mΩ

|VGS(TH)| Min (V)

1.3 V

|VGS(TH)| Max (V)

2.5 V

QG Typ @ |VGS| = 4.5V (nC)

5.4 nC

QG Typ @ |VGS| = 10V (nC)

10.4 nC

CISS Typ (pF)

631 pF

CISS Condition @|VDS| (V)

40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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