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DMTH8012LPSW

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliableand Robust End Application
High Conversion Efficiency
Low R_DS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Additional Tin-plated on Sidewall Pads for Optical Solder Inspection

Application(s)

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	10.3 A
\|I_DS\| @T_C = +25°C (A)	53.7 A
P_D @T_A = +25°C (W)	3.1 W
P_D @T_C = +25°C (W)	83.3 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	17 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	23.5 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	34 nC
C_ISS Typ (pF)	1949 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH8012LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products