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DMTH8012LK3Q

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
Low R_DS(ON) – Ensures On-State Losses are Minimized
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed

Application(s)

Engine Management Units
Motor Control
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	50 A
P_D @T_A = +25°C (W)	2.6 W
P_D @T_C = +25°C (W)	60 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	16 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	21 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	24.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	46.8 nC
C_ISS Typ (pF)	2051 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH8012LK3Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2591	2022-06-21	2022-09-21	Change of Lead Frame Type for Select Automotive Products