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DMTH8008LFGQ

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
Low RDS(ON) – Ensures On-State Losses are Minimized
Excellent Q_gd ×R_DS(ON)Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH8008LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	17 A
\|I_DS\| @T_C = +25°C (A)	70 A
P_D @T_A = +25°C (W)	2.8 W
P_D @T_C = +25°C (W)	50 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	6.9 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	10.4 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	18.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	37.7 nC
C_ISS Typ (pF)	2254 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH8008LFGQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile