80V +175°C N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switches.
| Compliance (Only Automotive Supports PPAP) | Automotive |
|---|---|
| AEC Qualified | Yes |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 80 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 100 A |
| PD @TA = +25°C (W) | 2.9 W |
| PD @TC = +25°C (W) | 125 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 3.8 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 5.3 mΩ |
| |VGS(TH)| Min (V) | 1.3 V |
| |VGS(TH)| Max (V) | 2.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 43 nC |
| QG Typ @ |VGS| = 10V (nC) | 81 nC |
| CISS Typ (pF) | 4979 pF |
| CISS Condition @|VDS| (V) | 40 V |
