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DMTH69M9LPDWQ

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH69M9LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Wireless charging
DC-DC converters
Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_C = +25°C (A)	49 A
P_D @T_A = +25°C (W)	2.8 W
P_D @T_C = +25°C (W)	51.7 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	12.5 mΩ
\|V_GS(TH)\| Min (V)	0.7 V
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	32 nC
C_ISS Typ (pF)	2178 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH69M9LPDWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products