Diodes Incorporated
Back to MOSFET Master Table


60V 175°C Dual N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.


  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH69M9LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/


  • Wireless charging
  • DC-DC converters
  • Power managements

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 49
PD @TA = +25°C (W) 2.8
PD @TC = +25°C (W) 51.7
RDS(ON)Max@ VGS(10V)(mΩ) 12.5 mΩ
|VGS(TH)| Min (V) 0.7 V
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 10V (nC) 32 nC
CISS Typ (pF) 2178 pF
CISS Condition @|VDS| (V) 30 V

Related Content


Technical Documents


Recommended Soldering Techniques