Diodes Incorporated
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DMTH69M9LPDW

60V 175°C Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production –
  • Ensures More Reliable and Robust End Application
  • Thermally Efficient Package - Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH69M9LPDWQ)

Application(s)

  • Wireless charging
  • DC-DC converters
  • Power managements

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 49
PD @TA = +25°C (W) 2.8
PD @TC = +25°C (W) 51.7
RDS(ON)Max@ VGS(10V)(mΩ) 12.5 mΩ
|VGS(TH)| Min (V) 0.7 V
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 10V (nC) 32 nC
CISS Typ (pF) 2178 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf