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DMTH69M9LPDW

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Thermally Efficient Package - Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH69M9LPDWQ)

Application(s)

Wireless charging
DC-DC converters
Power managements

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_C = +25°C (A)	49 A
P_D @T_A = +25°C (W)	2.8 W
P_D @T_C = +25°C (W)	51.7 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	12.5 mΩ
\|V_GS(TH)\| Min (V)	0.7 V
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	32 nC
C_ISS Typ (pF)	2178 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH69M9LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf