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DMTH69M8LFVW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C—Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application
Low On-Resistance
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH69M8LFVWQ)

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	15.9 A
\|I_DS\| @T_C = +25°C (A)	45.4 A
P_D @T_A = +25°C (W)	3.6 W
P_D @T_C = +25°C (W)	29.4 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	9.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	13.3 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5 nC
C_ISS Typ (pF)	1925 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH69M8LFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile