60V +175°C N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching
performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | Yes |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 215 A |
PD @TA = +25°C (W) | 3.2 W |
PD @TC = +25°C (W) | 167 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 1.6 mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 130.6 nC |
CISS Typ (pF) | 8306 pF |
CISS Condition @|VDS| (V) | 30 V |