DMTH6016LPDW: 60V +175°C Dual N-Channel Enhancement Mode MOSFET (MOSFET Master Table)

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMTH6016LPDWQ)

Application(s)

Engine-management systems
Body control electronics
DC-DC converters

Specifications & Technical Documents

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	33.2
P_D @T_A = +25°C (W)	2.5
P_D @T_C = +25°C (W)	37.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	19 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	17 nC
C_ISS Typ (pF)	864 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

DMTH6016LPDW