Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
60V +175?C N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
60 V |
|VGS| (±V) |
16 ±V |
|IDS| @TA = +25°C (A) |
9.4 A |
|IDS| @TC = +25°C (A) |
36.3 A |
PD @TA = +25°C (W) |
2.6 W |
PD @TC = +25°C (W) |
36.3 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
20 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
27 mΩ |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
7.1 nC |
QG Typ @ |VGS| = 10V (nC) |
14.3 nC |
CISS Typ (pF) |
825 pF |
CISS Condition @|VDS| (V) |
30 V |
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