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DMTH6015LDVW

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize R_DS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Wireless Charging
DC-DC Converters
Power Management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	9.2 A
\|I_DS\| @T_C = +25°C (A)	24.5 A
P_D @T_A = +25°C (W)	3 W
P_D @T_C = +25°C (W)	24.5 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	20.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	27 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14.3 nC
C_ISS Typ (pF)	825 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6015LDVW.spice.txt

Recommended Soldering Techniques

TN1.pdf