Diodes Incorporated
TO252 DPAK

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TO252-DPAK.png
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DMTH6010SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.

Feature(s)

  • Low RDS(ON) – ensures on state losses are minimized
  • Excellent Qgd x RDS (ON) Product (FOM)
  • Advanced Technology for DC/DC converts
  • Small form factor thermally efficient package enables higher density end products

Application(s)

  • Power Mangagement Functions
  • DC-DC Converters 
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 16.3
|IDS| @TC = +25°C (A) 70
PD @TA = +25°C (W) 3.1
PD @TC = +25°C (W) 59
RDS(ON)Max@ VGS(10V)(mΩ) 8 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 38.1 nC
CISS Typ (pF) 2841 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.