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DMTH6009LPSQ

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. The device is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-Frequency switching, synchronous rectifications, and DC-DC converters.

Feature(s)

Rated to +175°C—Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production —
Ensures More Reliable and Robust End Application
Low R_DS(ON)—Minimizes Power Losses
Low Q_G—Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH6009LPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

High-Frequency switching
Synchronous rectifications
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	11.76 A
\|I_DS\| @T_C = +25°C (A)	89.5 A
P_D @T_A = +25°C (W)	2.8 W
P_D @T_C = +25°C (W)	136 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	10 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5 nC
C_ISS Typ (pF)	1925 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6009LPSQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile