Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060-8 (SWP) (Type UX)

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMTH6009LPS

60V 175?C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON) – Minimizes Power Losses
Low Q_G – Minimizes Switching Losses

Application(s)

High Frequency Switching
Synchronous Rectification
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	11.76 A
\|I_DS\| @T_C = +25°C (A)	89.5 A
P_D @T_A = +25°C (W)	2.8 W
P_D @T_C = +25°C (W)	136 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	10 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	12 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5 nC
C_ISS Typ (pF)	1925 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6009LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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