Diodes Incorporated
TO252 DPAK

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DMTH6009LK3

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Excellent QGD x RDS(ON) Product (FOM)
  • Advanced Technology for DC-DC Converters
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

  • Power management functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TA = +25°C (A) 14.2
|IDS| @TC = +25°C (A) 59
PD @TA = +25°C (W) 3.2
PD @TC = +25°C (W) 60
RDS(ON)Max@ VGS(10V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12.8 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 15.6 nC
QG Typ @ |VGS| = 10V (nC) 33.5 nC
CISS Typ (pF) 1925 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.