Diodes Incorporated
PowerDI5060 8

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DMTH6006LPSW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C—Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching(UIS) Test in Production — Ensures More Reliable and Robust End Application
  • Low RDS(ON)—Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 17.2 A
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 2.88 W
PD @TC = +25°C (W) 100 W
RDS(ON)Max@ VGS(10V)(mΩ) 6.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 10 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 18.1 nC
QG Typ @ |VGS| = 10V (nC) 34.9 nC
CISS Typ (pF) 2162 pF
CISS Condition @|VDS| (V) 30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC