60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-frequency switching, sync rectification, and DC-DC converters.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 20.6 |
|IDS| @TC = +25°C (A) | 100 |
PD @TA = +25°C (W) | 3.2 |
PD @TC = +25°C (W) | 150 |
RDS(ON)Max@ VGS(10V)(mΩ) | 5.5 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 10 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 23.1 nC |
QG Typ @ |VGS| = 10V (nC) | 47.1 nC |
CISS Typ (pF) | 2962 pF |
CISS Condition @|VDS| (V) | 30 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |