Back to MOSFET Master Table

DMTH6004SCTB

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

Rated to 175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DSON – Minimizes Power Losses
Low Q_g – Minimizes Switching Losses

Application(s)

Engine Management Systems
Body Control Electronics
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_A = +25°C (W)	4.7 W
P_D @T_C = +25°C (W)	136 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	3.4 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	95.4 nC
C_ISS Typ (pF)	4556 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6004SCTB.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.
PCN-2403	2019-03-25	2019-06-19	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.

FAQs

Related Application FAQs

Smart Grid & Energy