40V +175°C N-Channel Enhancement Mode MOSFET
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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
40 V |
|VGS| (±V) |
20 ±V |
|IDS| @TC = +25°C (A) |
356 A |
PD @TA = +25°C (W) |
4.2 W |
PD @TC = +25°C (W) |
200 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
0.9 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
1.5 mΩ |
|VGS(TH)| Min (V) |
1 V |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 10V (nC) |
50 nC |
CISS Typ (pF) |
111 pF |
CISS Condition @|VDS| (V) |
20 V |
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