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DMTH47M2SPSW

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI5060-8

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes Power Losses
  • Wettable Flank for Improved Optical Inspection
  • Fast Switching Speed
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • High Frequency Switching
  • Synchronous Rectification
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

40 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

73 A

PD @TA = +25°C (W)

3.3 W

PD @TC = +25°C (W)

68 W

RDS(ON)Max@ VGS(10V)  (mΩ)

7.5 mΩ

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

12.1 nC

CISS Typ (pF)

897 pF

CISS Condition @|VDS| (V)

20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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