Diodes Incorporated
PowerDI5060 8

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DMTH43M8LPSQ

40V 175°C SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments 
  • 100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • BLDC Motors
  • DC-DC Converters
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 22 A
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 2.7 W
PD @TC = +25°C (W) 5 W
RDS(ON)Max@ VGS(10V)(mΩ) 3.3 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 5 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.6 nC
QG Typ @ |VGS| = 10V (nC) 38.5 nC
CISS Typ (pF) 2693 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products