Diodes Incorporated
TO252 DPAK

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DMTH43M8LK3Q

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Excellent Qgd x RDS(ON) Product (FOM)

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 17.6
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 3.1
PD @TC = +25°C (W) 88
RDS(ON)Max@ VGS(10V)(mΩ) 3.6 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 5.2 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.6 nC
QG Typ @ |VGS| = 10V (nC) 38.5 nC
CISS Typ (pF) 2693 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf