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DMTH4008LPDW

40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching, Test in Production– Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4008LPDWQ)

Application(s)

Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	10 A
\|I_DS\| @T_C = +25°C (A)	46.2 A
P_D @T_A = +25°C (W)	1.3 W
P_D @T_C = +25°C (W)	39.4 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	12.3 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	17.5 mΩ
\|V_GS(TH)\| Max (V)	2.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.8 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	12.3 nC
C_ISS Typ (pF)	881 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMTH4008LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf