40V 175°C Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, marking it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
Yes |
Polarity |
N+N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
40 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
14.2 A |
|IDS| @TC = +25°C (A) |
45 A |
PD @TA = +25°C (W) |
2.6 W |
PD @TC = +25°C (W) |
37.5 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
8.6 mΩ |
|VGS(TH)| Max (V) |
4 V |
QG Typ @ |VGS| = 10V (nC) |
41.9 nC |
CISS Typ (pF) |
2026 pF |
CISS Condition @|VDS| (V) |
30 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |