Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMTH4007LPS

40V +175?C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
< 1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under a separate datasheet (DMTH4007LPSQ)

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	15.5 A
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_A = +25°C (W)	2.7 W
P_D @T_C = +25°C (W)	150 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	6.5 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	9.8 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	12.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	29.1 nC
C_ISS Typ (pF)	1895 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMTH4007LPS .spice.txt

Recommended Soldering Techniques

TN1.pdf

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