Diodes Incorporated
TO252 DPAK

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DMTH4004SK3

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low QG – Minimizes Switching Losses

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 3.9 W
PD @TC = +25°C (W) 180 W
RDS(ON)Max@ VGS(10V)(mΩ) 3.2 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 68.6 nC
CISS Typ (pF) 4305 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

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