Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)
40V +175°C N-Channel Enhancement Mode MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
40 V |
|VGS| (±V) |
20 ±V |
|IDS| @TC = +25°C (A) |
100 A |
PD @TA = +25°C (W) |
3.9 W |
PD @TC = +25°C (W) |
180 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
3 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
5 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
35 nC |
QG Typ @ |VGS| = 10V (nC) |
83 nC |
CISS Typ (pF) |
4450 pF |
CISS Condition @|VDS| (V) |
25 V |
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