40V 175°C N-Channel Enhancement Mode MOSFET POWERDI1012-8 (TOLL)
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 40 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 300 A |
PD @TA = +25°C (W) | 6 W |
PD @TC = +25°C (W) | 300 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 0.85 mΩ |
|VGS(TH)| Min (V) | 2 V |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 150 nC |
CISS Typ (pF) | 13185 pF |
CISS Condition @|VDS| (V) | 20 V |