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DMTH3M70LPSW

30V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
< 1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under a separate datasheet (DMTH3M70LPSWQ)

Application(s)

Body control electronics
DC-DC converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	61 A
\|I_DS\| @T_C = +25°C (A)	150 A
P_D @T_A = +25°C (W)	3.85 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	0.55 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	0.95 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	69.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	152.7 nC
C_ISS Typ (pF)	11112 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMTH3M70LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products