Diodes Incorporated
PowerDI5060 8

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DMTH32M5LPS

30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • Thermally Efficient Package-Cooler Running Applications
  • <1.1mm Package Profile – Ideal for Thin Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH32M5LPSQ)

Application(s)

  • DC-DC Converters
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 170 A
PD @TA = +25°C (W) 3.2 W
PD @TC = +25°C (W) 100 W
RDS(ON)Max@ VGS(10V)(mΩ) 2.2 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3.2 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 34 nC
QG Typ @ |VGS| = 10V (nC) 68 nC
CISS Typ (pF) 3944 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf