Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMTH32M5LPS

30V 175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • Thermally Efficient Package-Cooler Running Applications
  • <1.1mm Package Profile – Ideal for Thin Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH32M5LPSQ)

Application(s)

  • DC-DC Converters
  • Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

16 ±V

|IDS| @TC = +25°C (A)

170 A

PD @TA = +25°C (W)

3.2 W

PD @TC = +25°C (W)

100 W

RDS(ON)Max@ VGS(10V)  (mΩ)

2.2 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

3.2 mΩ

|VGS(TH)| Max (V)

3 V

QG Typ @ |VGS| = 4.5V (nC)

34 nC

QG Typ @ |VGS| = 10V (nC)

68 nC

CISS Typ (pF)

3944 pF

CISS Condition @|VDS| (V)

25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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