Diodes Incorporated
TO252 DPAK

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DMTH3002LK3

30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1& 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH3002LK3Q)

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 150
PD @TA = +25°C (W) 3.1
RDS(ON)Max@ VGS(10V)(mΩ) 2.45 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3.5 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 30 nC
QG Typ @ |VGS| = 10V (nC) 69 nC
CISS Typ (pF) 4336 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs