Diodes Incorporated — Analog and discrete power solutions
PowerDI1012 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI1012-8 (TOLL)

PowerDI1012 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI1012-8 (TOLL)

PowerDI1012 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI1012-8 (TOLL)

Back to DMTH10H2M5STLW

DMTH10H2M5STLW

100V 175°C N-Channel Enhancement Mode MOSFET POWERDI1012-8

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (DMTH10H2M5STLWQ)

Application(s)

  • Motor control
  • DC-DC converters
  • Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

229 A

PD @TA = +25°C (W)

5.8 W

PD @TC = +25°C (W)

230.8 W

RDS(ON)Max@ VGS(10V)  (mΩ)

2.2 mΩ

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

124.4 nC

CISS Typ (pF)

8450 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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