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DMTH10H2M5STLW

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8

Datasheet

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize (R_DS(ON)), yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production
High Conversion Efficiency
Low (R_DS(ON)) – Minimizes On State Losses
Wettable Flank for Improved Optical Inspection

Application(s)

Motor Control
DC-DC Converters
Power Management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	248 A
P_D @T_A = +25°C (W)	5.8 W
P_D @T_C = +25°C (W)	230.8 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	2.5 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	124.4 nC
C_ISS Typ (pF)	8450 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H2M5STLW.spice.txt

Recommended Soldering Techniques

TN1.pdf