Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6/SWP (Type F)

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DMTH10H029LFDFW

100V +175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  

Feature(s)

  • Rated to +175°C — Ideal for High Ambient Temperature Environments
  • 0.6mm Profile — Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low On-Resistance
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-management functions
  • Battery operated systems and solid-state relays
  • Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

6.3 A

|IDS| @TC = +25°C (A)

- A

PD @TA = +25°C (W)

2.5 W

PD @TC = +25°C (W)

- W

RDS(ON)Max@ VGS(10V)  (mΩ)

29 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

46 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

- mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

- mΩ

|VGS(TH)| Min (V)

1.3 V

|VGS(TH)| Max (V)

2.5 V

QG Typ @ |VGS| = 4.5V (nC)

6 nC

QG Typ @ |VGS| = 10V (nC)

12 nC

CISS Typ (pF)

619 pF

CISS Condition @|VDS| (V)

50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products