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DMTH10H025LK3

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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This new-generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes Power Losses
Low Q_G – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH10H025LK3Q)

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	51.7 A
P_D @T_A = +25°C (W)	3.1 W
P_D @T_C = +25°C (W)	100 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	22 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	43.7 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	21 nC
C_ISS Typ (pF)	1471 pF
C_ISS Condition @\|V_DS\| (V)	50 V

SPICE Model

DMTH10H025LK3.spice.txt

Recommended Soldering Techniques

TN1.pdf