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DMTH10H010SPSWQ

100V +175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.  

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes On-State Losses
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH10H010SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor controls
  • DC-DC converters
  • Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

15 A

|IDS| @TC = +25°C (A)

100 A

PD @TA = +25°C (W)

3 W

PD @TC = +25°C (W)

166 W

RDS(ON)Max@ VGS(10V)  (mΩ)

8.8 mΩ

|VGS(TH)| Min (V)

2 V

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

56.4 nC

CISS Typ (pF)

4468 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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