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DMTH10H010SPS

100V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON), yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more reliable and robust end application
Low R_DS(ON)– Minimizes On-State Losses
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
DC-DC converters
Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	15 A
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_A = +25°C (W)	3 W
P_D @T_C = +25°C (W)	166 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	8.8 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	11.5 (@6V) mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	56.4 nC
C_ISS Typ (pF)	4468 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H010SPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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