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DMTH10H010LPSW

100V +175?C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor controls
  • DC-DC converters
  • Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

15 A

|IDS| @TC = +25°C (A)

98.4 A

PD @TA = +25°C (W)

3 W

PD @TC = +25°C (W)

125 W

RDS(ON)Max@ VGS(10V)  (mΩ)

8.6 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

20 mΩ

|VGS(TH)| Min (V)

1.4 V

|VGS(TH)| Max (V)

3 V

QG Typ @ |VGS| = 10V (nC)

53.7 nC

CISS Typ (pF)

2592 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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