Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
100V 175°C N-Channel Enhancement Mode MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Rated to +175°C – Ideal for High Ambient Temperature Environments
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
10.8 A |
|IDS| @TC = +25°C (A) |
98.4 A |
PD @TA = +25°C (W) |
1.5 W |
PD @TC = +25°C (W) |
125 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
8.6 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
20 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 10V (nC) |
53.7 nC |
CISS Typ (pF) |
2592 pF |
CISS Condition @|VDS| (V) |
50 V |
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