Log in or register
to manage email notifications about changes to datasheets or PCNs for this part.
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Rated to +175C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products