Diodes Incorporated — Analog and discrete power solutions
SO 8

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DMT8012LSS

80V N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Notebook Battery Power Management
  • Loadswitches
  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 9.7 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)  (mΩ) 16.5 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 20 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 15 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1949 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products