NRND = Not Recommended for New Design
Inactive Datasheet Archive
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) | 30 |
---|---|
CISS Typ (pF) | 1925 |
ESD Diodes (Y|N) | No |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 33.5 |
QG Typ @ |VGS| = 4.5V (nC) | 15.6 |
AEC Qualified | No |
RDS(ON)Max@ VGS(1.8V) (mΩ) | N/A |
RDS(ON)Max@ VGS(10V) (mΩ) | 12 |
RDS(ON)Max@ VGS(2.5V) (mΩ) | N/A |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 14 |
|VDS| (V) | 60 |
|VGS| (±V) | 20 |
|VGS(TH)| Max (V) | 2 |
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