Diodes Incorporated
PowerDI5060 8

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PowerDI5060-8.png
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DMT69M8LPS (Not Recommended for new design)

NRND = Not Recommended for New Design

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low QG – Minimizes Switching Losses

Application(s)

  • High Frequency Switching
  • Synchronous Rectification
  • DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 30
CISS Typ (pF) 1925
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 10.2
|IDS| @TC = +25°C (A) 70
PD @TA = +25°C (W) 2.3
PD @TC = +25°C (W) 113
Polarity N
QG Typ @ |VGS| = 10V (nC) 33.5
QG Typ @ |VGS| = 4.5V (nC) 15.6
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 12
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 14
|VDS| (V) 60
|VGS| (±V) 16
|VGS(TH)| Max (V) 2

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2347 2018-05-22 2018-11-22 Device End of Life (EOL)