Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMT69M8LPS (NRND)

NRND = Not Recommended for New Design

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Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON) – Minimizes Power Losses
Low Q_G – Minimizes Switching Losses

Application(s)

High Frequency Switching
Synchronous Rectification
DC-DC Converters

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	30
C_ISS Typ (pF)	1925
ESD Diodes (Y\|N)	No
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(10V) (mΩ)	12
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	14
\|V_DS\| (V)	60
\|V_GS\| (±V)	16
\|V_GS(TH)\| Max (V)	2

Technical Documents

SPICE Model

DMT69M8LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf