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DMT616MLSS

60V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON)—Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed

Application(s)

High-Frequency Switching
Synchronous Rectification
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	10 A
P_D @T_A = +25°C (W)	2.06 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	14 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	21 mΩ
\|V_GS(TH)\| Max (V)	2.2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	13.6 nC
C_ISS Typ (pF)	785 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT616MLSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products