Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8

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DMT6017LFV

65V N-CHANNEL ENHANCEMENT MODE MOSFET

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Specifications & Technical Documents

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 65 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 36
PD @TA = +25°C (W) 2.12
PD @TC = +25°C (W) 39.06
RDS(ON)Max@ VGS(10V)(mΩ) 20 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 23 mΩ
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 7.5 nC
QG Typ @ |VGS| = 10V (nC) 15.3 nC
CISS Typ (pF) 891 pF
CISS Condition @|VDS| (V) 30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.