Diodes Incorporated
PowerDI3333 8

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PowerDI3333-8.png
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DMT6017LDV

65V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
  • Low RDS(ON) — Ensures On-State Losses are Minimized
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate

Application(s)

  • Wireless Charging
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 65 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 25.3 A
PD @TA = +25°C (W) 2.34 W
RDS(ON)Max@ VGS(10V)(mΩ) 22 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 29 mΩ
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 7.5 nC
QG Typ @ |VGS| = 10V (nC) 15.3 nC
CISS Typ (pF) 891 pF
CISS Condition @|VDS| (V) 30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC